@conference {xiong2022top,
	title = {Top-Gate CVD WSe 2 pFETs with Record-High I d\~ 594 $μ$A/$μ$m, G m\~ 244 $μ$S/$μ$m and WSe 2/MoS 2 CFET based Half-adder Circuit Using Monolithic 3D Integration},
	booktitle = {2022 International Electron Devices Meeting (IEDM)},
	year = {2022},
	pages = {20{\textendash}6},
	publisher = {IEEE},
	organization = {IEEE},
	author = {Xiong, Xiong and Liu, Shiyuan and Liu, Honggang and Yang Chen and Shi, Xinhang and Xin Wang and Li, Xuefei and Ru HUANG and Wu, Yanqing}
}
