@conference {hu2022optimized,
	title = {Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85{\textdegree} C at Zero V hold with Sub-10 ns Speed and 3-bit Operation},
	booktitle = {2022 International Electron Devices Meeting (IEDM)},
	year = {2022},
	pages = {26{\textendash}6},
	publisher = {IEEE},
	organization = {IEEE},
	author = {Hu, Qianlan and Li, Qijun and Zhu, Shenwu and Gu, Chengru and Liu, Shiyuan and Ru HUANG and Wu, Yanqing}
}
