@article {hu2022capacitorless,
	title = {Capacitorless DRAM Cells Based on High-Performance Indium-Tin-Oxide Transistors With Record Data Retention and Reduced Write Latency},
	journal = {IEEE Electron Device Letters},
	volume = {44},
	number = {1},
	year = {2022},
	pages = {60{\textendash}63},
	publisher = {IEEE},
	author = {Hu, Qianlan and Gu, Chengru and Zhu, Shenwu and Li, Qijun and Tong, Anyu and Kang, Jiyang and Ru HUANG and Wu, Yanqing}
}
