@conference {li202010,
	title = {10-nm Channel Length Indium-Tin-Oxide transistors with I on= 1860 $μ$A/$μ$m, G m= 1050 $μ$S/$μ$m at V ds= 1 V with BEOL Compatibility},
	booktitle = {2020 IEEE International Electron Devices Meeting (IEDM)},
	year = {2020},
	pages = {40{\textendash}5},
	publisher = {IEEE},
	organization = {IEEE},
	author = {Li, Shengman and Gu, Chengru and Li, Xuefei and Ru HUANG and Wu, Yanqing}
}
