@article {hu2019improved,
	title = {Improved current collapse in recessed AlGaN/GaN MOS-HEMTs by interface and structure engineering},
	journal = {IEEE Transactions on Electron Devices},
	volume = {66},
	number = {11},
	year = {2019},
	pages = {4591{\textendash}4596},
	publisher = {IEEE},
	author = {Hu, Qianlan and Hu, Ben and Gu, Chengru and Li, Tiaoyang and Li, Sichao and Li, Shengman and Li, Xuefei and Wu, Yanqing}
}
