@article {RN77,
	title = {High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm},
	journal = {Ieee Electron Device Letters},
	volume = {29},
	number = {4},
	year = {2008},
	pages = {294-296},
	type = {Journal Article},
	issn = {0741-3106},
	doi = {10.1109/led.2008.917817},
	url = {\&lt;Go to ISI\&gt;://WOS:000254225800004},
	author = {Xuan, Y. and Wu, Y. Q. and Ye, P. D.}
}
