@book {RN92,
	title = {High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al(2)O(3), HfO(2), and HfAlO as gate dielectrics},
	series = {2007 Ieee International Electron Devices Meeting, Vols 1 and 2},
	year = {2007},
	pages = {637-640},
	type = {Book},
	isbn = {978-1-4244-1507-6},
	doi = {10.1109/iedm.2007.4419020},
	url = {\&lt;Go to ISI\&gt;://WOS:000259347800145},
	author = {Xuan, Y. and Wu, Y. Q. and Shen, T. and Yang, T. and Ye, P. D. and Ieee}
}
