@article {RN87,
	title = {Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al2O3 as gate dielectric},
	journal = {Ieee Electron Device Letters},
	volume = {28},
	number = {11},
	year = {2007},
	pages = {935-938},
	type = {Journal Article},
	issn = {0741-3106},
	doi = {10.1109/led.2007.906436},
	url = {\&lt;Go to ISI\&gt;://WOS:000250524200001},
	author = {Xuan, Y. and Wu, Y. Q. and Lin, H. C. and Shen, T. and Ye, Peide D.}
}
