@book {RN95,
	title = {High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm},
	series = {65th Device Research Conference},
	year = {2007},
	pages = {207-8},
	type = {Book},
	isbn = {978-1-4244-1101-6},
	url = {\&lt;Go to ISI\&gt;://INSPEC:9871424},
	author = {Xuan, Y. and Wu, Y. Q. and Lin, H. C. and Shen, T. and Ye, P. D.}
}
