@book {RN94,
	title = {Inversion-type enhancement-mode InP MOSFETs with ALD AI2O3, HfO2 and HfAlO nanolaminates as high-k gate dielectrics},
	series = {65th Device Research Conference},
	year = {2007},
	pages = {117-18},
	type = {Book},
	isbn = {978-1-4244-1101-6},
	url = {\&lt;Go to ISI\&gt;://INSPEC:9871407},
	author = {Wu, Y. Q. and Xuan, Y. and Ye, P. D. and Cheng, Z. and Lochtefeld, A.}
}
