@article {RN3,
	title = {Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiOX as Gate Dielectric},
	journal = {Ieee Electron Device Letters},
	volume = {40},
	number = {2},
	year = {2019},
	pages = {295-298},
	type = {Journal Article},
	issn = {0741-3106},
	doi = {10.1109/led.2018.2888486},
	url = {\&lt;Go to ISI\&gt;://WOS:000457606300035},
	author = {Li, Sichao and Hu, Qianlan and Xin Wang and Li, Tiaoyang and Li, Xuefei and Wu, Yanqing}
}
