@article {RN8,
	title = {Channel Engineering of Normally-OFF AlGaN/GaN MOS-HEMTs by Atomic Layer Etching and High-kappa Dielectric},
	journal = {Ieee Electron Device Letters},
	volume = {39},
	number = {9},
	year = {2018},
	pages = {1377-1380},
	type = {Journal Article},
	issn = {0741-3106},
	doi = {10.1109/led.2018.2856934},
	url = {\&lt;Go to ISI\&gt;://WOS:000443054700027},
	author = {Hu, Qianlan and Li, Sichao and Li, Tiaoyang and Xin Wang and Li, Xuefei and Wu, Yanqing}
}
