@article {RN54,
	title = {Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors},
	journal = {Journal of Applied Physics},
	volume = {109},
	number = {5},
	year = {2011},
	type = {Journal Article},
	issn = {0021-8979},
	doi = {10.1063/1.3553440},
	url = {\&lt;Go to ISI\&gt;://WOS:000288387900056},
	author = {Gu, J. J. and Wu, Y. Q. and Ye, P. D.}
}
