@book {RN56,
	title = {First experimental demonstration of gate-all-around III-V MOSFETs by top-down approach},
	series = {2011 IEEE International Electron Devices Meeting},
	year = {2011},
	pages = {33.2 (4 pp.)-33.2 (4 pp.)},
	type = {Book},
	isbn = {978-1-4577-0506-9},
	doi = {10.1109/iedm.2011.6131662},
	url = {\&lt;Go to ISI\&gt;://INSPEC:12504339},
	author = {Gu, J. J. and Liu, Y. Q. and Wu, Y. Q. and Colby, R. and Gordon, R. G. and Ye, P. D.}
}
