<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chao Ma</style></author><author><style face="normal" font="default" size="100%">Yufan Chen</style></author><author><style face="normal" font="default" size="100%">Yuan, Yulong</style></author><author><style face="normal" font="default" size="100%">Xia, Tian</style></author><author><style face="normal" font="default" size="100%">Huaidong Ye</style></author><author><style face="normal" font="default" size="100%">Wangchang Li</style></author><author><style face="normal" font="default" size="100%">Hu, Youfan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">High-Performance Integrated Pressure Sensors via Microstructured Electrodes Coupled With Floating-Gate CNT Transistors</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">carbon nanotube transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Couplings</style></keyword><keyword><style  face="normal" font="default" size="100%">Dielectrics</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrodes</style></keyword><keyword><style  face="normal" font="default" size="100%">Hafnium compounds</style></keyword><keyword><style  face="normal" font="default" size="100%">integrated sensors</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">microstructured electrodes</style></keyword><keyword><style  face="normal" font="default" size="100%">Pressure sensors</style></keyword><keyword><style  face="normal" font="default" size="100%">Sensitivity</style></keyword><keyword><style  face="normal" font="default" size="100%">Sensors</style></keyword><keyword><style  face="normal" font="default" size="100%">Thin film transistors</style></keyword><keyword><style  face="normal" font="default" size="100%">Transistors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2026</style></year><pub-dates><date><style  face="normal" font="default" size="100%">Jan</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">47</style></volume><pages><style face="normal" font="default" size="100%">152-155</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Transistor-integrated flexible pressure sensors have received considerable interest in emerging fields such as humanoid robotics, prosthetics, and implantable electronics. However, existing designs for these integrated sensors often exhibit a trade-off between pressure response and operating voltage, thus significantly limiting their practical applications. In this letter, we report a unique device design of integrated pressure sensors based on deformable microstructured electrodes capacitively coupled with floating-gate carbon nanotube transistors. The microstructured electrodes can dramatically enhance the pressure-introduced electrostatic control of the transistor, enabling a substantial improvement in the transduced pressure response at low operating voltages. With this unique design, we achieve a high pressure response of $10^5$ and an ultrahigh sensitivity up to $10^4 \text kPa^\text - 1$ at a low operating voltage below 3 V, which holds great promise for the development of advanced functionalized flexible electronics.</style></abstract></record></records></xml>