<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xia, Tian</style></author><author><style face="normal" font="default" size="100%">Fan Xia</style></author><author><style face="normal" font="default" size="100%">Yuru Wang</style></author><author><style face="normal" font="default" size="100%">Li Xiang</style></author><author><style face="normal" font="default" size="100%">Chao Ma</style></author><author><style face="normal" font="default" size="100%">Chen, Xingxing</style></author><author><style face="normal" font="default" size="100%">Liang, Xuelei</style></author><author><style face="normal" font="default" size="100%">Peng, Lian-Mao</style></author><author><style face="normal" font="default" size="100%">Hu, Youfan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Reconfigurable Flexible Complementary Circuits Based on Polarity-Configurable Carbon Nanotube Transistors</style></title><secondary-title><style face="normal" font="default" size="100%">ACS Nano</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2025</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1021/acsnano.5c06819</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">22</style></number><volume><style face="normal" font="default" size="100%">19</style></volume><pages><style face="normal" font="default" size="100%">21169-21178</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Functional configurability is highly desired for flexible electronics to serve ever-changing and diverse application scenarios. In complementary metal–oxide–semiconductor (CMOS) logic circuits, functional configurations can be achieved at the most basic device level by modulating the P/N polarity of the field-effect transistors. The intrinsic ambipolarity of low-dimensional materials provides the possibility of configuring the polarity of the constructed transistors by selectively injecting carriers on demand with proper methodologies. In this study, we propose a strategy based on carbon nanotubes (CNTs), with the initial devices functioning as conventional p-type thin film transistors (TFTs), that achieves polarity configuration through reversible electrostatic doping by applying and removing a polymer doping layer on the channel area covered with a Y2O3 passivation layer. This method exhibits favorable characteristics, including high performance comparable to those of conventional devices under normal operation conditions, good P/N symmetry, large-scale uniformity, nonvolatile features, and robust stability. The resultant configurable TFTs facilitate the construction of a CMOS inverter with a rail-to-rail output and a high voltage gain exceeding 40. Basic circuit components such as diodes, rectifiers, and logic gates are constructed with reconfigurable functionalities. To illustrate its potential, we designed a reconfigurable CMOS circuit module that can be optionally programmed into four different functions─NAND, NOR, XOR, and XNOR, which can serve as a building block for constructing more complex reconfigurable integrated circuits, applicable in fields such as hardware security and adaptive monitoring.</style></abstract><notes><style face="normal" font="default" size="100%">PMID: 40415391</style></notes></record></records></xml>