<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Guanhua Long</style></author><author><style face="normal" font="default" size="100%">Yuru Wang</style></author><author><style face="normal" font="default" size="100%">Bai, Tianshun</style></author><author><style face="normal" font="default" size="100%">Wangchang Li</style></author><author><style face="normal" font="default" size="100%">Zhang, Panpan</style></author><author><style face="normal" font="default" size="100%">Xiaosong Deng</style></author><author><style face="normal" font="default" size="100%">Cai, Xiang</style></author><author><style face="normal" font="default" size="100%">Xi, Meiqi</style></author><author><style face="normal" font="default" size="100%">Lin, Yanxia</style></author><author><style face="normal" font="default" size="100%">Cheng, Xiaohan</style></author><author><style face="normal" font="default" size="100%">Fan, Chenwei</style></author><author><style face="normal" font="default" size="100%">Fan Xia</style></author><author><style face="normal" font="default" size="100%">Luo, Xiao</style></author><author><style face="normal" font="default" size="100%">Zhang, Zhishuai</style></author><author><style face="normal" font="default" size="100%">Liang, Xuelei</style></author><author><style face="normal" font="default" size="100%">Zhang, Zhiyong</style></author><author><style face="normal" font="default" size="100%">Sun, Nan</style></author><author><style face="normal" font="default" size="100%">Peng, Lian-Mao</style></author><author><style face="normal" font="default" size="100%">Hu, Youfan</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Super-saturated complementary carbon nanotube transistors with intrinsic gain singularities</style></title><secondary-title><style face="normal" font="default" size="100%">Nature Communications</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2025</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1038/s41467-025-58399-w</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">16</style></volume><pages><style face="normal" font="default" size="100%">3390</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Digital-driven scaling poses significant problems to analog circuits because scaling severely deteriorates transistor current saturation, significantly degrading the intrinsic gain. Special material properties of emerging low-dimensional semiconductors trigger the possibility of providing solutions. We report complementary carbon nanotube thin-film transistors with negative differential resistance-induced current super-saturation for high, exponentially variable intrinsic gain with immunity against degradation during scaling. Current super-saturation at the negative-to-positive differential resistance transition boundary provides intrinsic gain singularities. The large-window, gate-modulated negative differential resistance behavior derived from carbon nanotube’s characteristics enables its practical utilization in circuits. When approaching the singularity, we record that the intrinsic gain varies by orders of magnitude, ranging from 102 to 106 at different operation points. We further demonstrate high and exponentially variable gain in an operational amplifier, showing a tunable single-stage gain ranging from 35 to 60 decibels.</style></abstract></record></records></xml>