@article {11224565,
	title = {High-Performance Integrated Pressure Sensors via Microstructured Electrodes Coupled With Floating-Gate CNT Transistors},
	journal = {IEEE Electron Device Letters},
	volume = {47},
	number = {1},
	year = {2026},
	month = {Jan},
	pages = {152-155},
	abstract = {Transistor-integrated flexible pressure sensors have received considerable interest in emerging fields such as humanoid robotics, prosthetics, and implantable electronics. However, existing designs for these integrated sensors often exhibit a trade-off between pressure response and operating voltage, thus significantly limiting their practical applications. In this letter, we report a unique device design of integrated pressure sensors based on deformable microstructured electrodes capacitively coupled with floating-gate carbon nanotube transistors. The microstructured electrodes can dramatically enhance the pressure-introduced electrostatic control of the transistor, enabling a substantial improvement in the transduced pressure response at low operating voltages. With this unique design, we achieve a high pressure response of $10^5$ and an ultrahigh sensitivity up to $10^4 \text kPa^\text - 1$ at a low operating voltage below 3 V, which holds great promise for the development of advanced functionalized flexible electronics.},
	keywords = {carbon nanotube transistors, Couplings, Dielectrics, Electrodes, Hafnium compounds, integrated sensors, Logic gates, microstructured electrodes, Pressure sensors, Sensitivity, Sensors, Thin film transistors, Transistors},
	issn = {1558-0563},
	doi = {10.1109/LED.2025.3628324},
	author = {Chao Ma and Yufan Chen and Yuan, Yulong and Xia, Tian and Huaidong Ye and Wangchang Li and Hu, Youfan}
}
