@article {doi:10.1021/acsnano.5c06819,
	title = {Reconfigurable Flexible Complementary Circuits Based on Polarity-Configurable Carbon Nanotube Transistors},
	journal = {ACS Nano},
	volume = {19},
	number = {22},
	year = {2025},
	note = {PMID: 40415391},
	pages = {21169-21178},
	abstract = {Functional configurability is highly desired for flexible electronics to serve ever-changing and diverse application scenarios. In complementary metal{\textendash}oxide{\textendash}semiconductor (CMOS) logic circuits, functional configurations can be achieved at the most basic device level by modulating the P/N polarity of the field-effect transistors. The intrinsic ambipolarity of low-dimensional materials provides the possibility of configuring the polarity of the constructed transistors by selectively injecting carriers on demand with proper methodologies. In this study, we propose a strategy based on carbon nanotubes (CNTs), with the initial devices functioning as conventional p-type thin film transistors (TFTs), that achieves polarity configuration through reversible electrostatic doping by applying and removing a polymer doping layer on the channel area covered with a Y2O3 passivation layer. This method exhibits favorable characteristics, including high performance comparable to those of conventional devices under normal operation conditions, good P/N symmetry, large-scale uniformity, nonvolatile features, and robust stability. The resultant configurable TFTs facilitate the construction of a CMOS inverter with a rail-to-rail output and a high voltage gain exceeding 40. Basic circuit components such as diodes, rectifiers, and logic gates are constructed with reconfigurable functionalities. To illustrate its potential, we designed a reconfigurable CMOS circuit module that can be optionally programmed into four different functions-NAND, NOR, XOR, and XNOR, which can serve as a building block for constructing more complex reconfigurable integrated circuits, applicable in fields such as hardware security and adaptive monitoring.},
	doi = {10.1021/acsnano.5c06819},
	url = {https://doi.org/10.1021/acsnano.5c06819},
	author = {Xia, Tian and Fan Xia and Yuru Wang and Li Xiang and Chao Ma and Chen, Xingxing and Liang, Xuelei and Peng, Lian-Mao and Hu, Youfan}
}
