Jiang AN, Gao S, Wei XL, Liang XL, Chen Q. Amplitude response of multiwalled carbon nanotube probe with controlled length during tapping mode atomic force microscopy. Journal of Physical Chemistry C. 2008;112:15631-15636. SCI被引用次数:11.
Zhang YF, Yout LP, Shan XA, Wei XL, Huo HB, Xu WJ, Dai L. Growth, optical, and electrical properties of single-crystalline Si-CdSe biaxial p-n heterostructure nanowires. Journal of Physical Chemistry C [Internet]. 2007;111:14343-14347. 访问链接Abstract SCI被引用次数:13.
Single-crystalline Si-CdSe biaxial p-n heterostructure nanowires (NWs) have been grown via chemical vapor deposition method and characterized. The Si and CdSe subnanowires have diameters of about 30 and 60 nm, respectively, and grow along the [(2) over bar1 (1) over bar] and [0001] directions, respectively. Room-temperature photoluminescence (PL), Raman-scattering, and electrical transport measurements were made on single Si-CdSe biaxial heterostructure NWs. Strong CdSe band-edge emission peaked around 710 nm together with a broad emission centered at 600 nm is observed in the PL spectra. Intense sharp longitudinal optical phonon modes from both CdSe and Si are observed in Raman-scattering spectra. The resistivities, carrier concentrations, and carrier mobilities of single CdSe NW and Si subnanowire are estimated. A good rectification characteristic is observed in the I-V curve of Si-CdSe biaxial NW, which confirms that the Si-CdSe biaxial NW is a p-n heterostructure.
Wei X, Chen Q, Liu Y, Peng LM. Cutting and sharpening carbon nanotubes using a carbon nanotube 'nanoknife'. Nanotechnology. 2007;18. SCI被引用次数:34.
Ma RM, Wei XL, Dai L, Huo HB, Qin GG. Synthesis of CdS nanowire networks and their optical and electrical properties. Nanotechnology [Internet]. 2007;18. 访问链接Abstract
High quality single-crystal CdS nanowire ( NW) networks have been synthesized on Si(111) substrates via the chemical vapour deposition method. X-ray diffraction and selected area electron diffraction show that the NWs in the networks grow along the < 11 (2) over bar0 > directions and their (0001) crystal planes are parallel to the Si(111) substrates. Room-temperature photoluminescence (PL) spectra of single CdS NWs in the networks are dominated by a near-band-edge emission and free from deep-level defect emissions. The PLs resulting from free-exciton and bound-exciton recombinations are detected at 77 K. The results of the electrical transport measurement on the CdS NW networks show that the current can flow through different NWs via the cross-junctions. The resistivity, electron concentration and electron mobility of single NWs in the networks are estimated by fitting the I-V curves measured on single NWs with the metal-semiconductor-metal model suggested by Zhang et al (2006 Appl. Phys. Lett. 88 073102; 2007 Adv. Funct. Mater. at press).
Silicon Oxide Electron-Emitting Nanodiodes. Advanced Electronic Materials [Internet].:1800136. 访问链接Abstract
Abstract Electrically driven on-chip electron sources that do not need to be heated are long pursued, but their realization remains challenging. Here, it is shown that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ≈7 V in ≈100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ≈106 A cm−2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal–insulator–metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm−2 and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip electron sources.