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Frequency Response of SWCNT Field-Effect Transistors with MWCNT Interconnects

Citation:

Zhu YZ, Wang S, Wei XL, Ding L, Zhang ZY, Liang XL, Chen Q, Peng LM. Frequency Response of SWCNT Field-Effect Transistors with MWCNT Interconnects. Acta Physico-Chimica Sinica [Internet]. 2008;24:2122-2127.

摘要:

Single-walled carbon nanotube field-effect transistors (SWCNT FETs) with multi-walled carbon nanotubes (MWCNTs) as interconnects were fabricated, and their field effect properties were measured and compared with those of the case with metal leads as interconnects. Both cases showed almost the same direct current (DC) response, while the MWCNTs interconnected case showed a little better alternating current (AC) properties. AC measurement showed that the MWCNTs interconnected SWCNT FETs worked well at frequency up to 20 MHz.

附注:

Zhu Yu-Zhen Wang Sheng Wei Xian-Long Ding Li Zhang Zhi-Yong Liang Xue-Lei Chen Qing Peng Lian-Mao

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