<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wu, Gongtao</style></author><author><style face="normal" font="default" size="100%">Zhiwei Li</style></author><author><style face="normal" font="default" size="100%">Tang, Zhiqiang</style></author><author><style face="normal" font="default" size="100%">Wei, Dapeng</style></author><author><style face="normal" font="default" size="100%">Zhang, Gengmin</style></author><author><style face="normal" font="default" size="100%">Chen, Qing</style></author><author><style face="normal" font="default" size="100%">Peng, Lian-Mao</style></author><author><style face="normal" font="default" size="100%">Wei, Xianlong</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Silicon Oxide Electron-Emitting Nanodiodes</style></title><secondary-title><style face="normal" font="default" size="100%">Advanced Electronic Materials</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Graphene</style></keyword><keyword><style  face="normal" font="default" size="100%">on-chip electron source</style></keyword><keyword><style  face="normal" font="default" size="100%">resistive switching</style></keyword><keyword><style  face="normal" font="default" size="100%">silicon oxide</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800136</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">8</style></number><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">1800136</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p&gt;Abstract Electrically driven on-chip electron sources that do not need to be heated are long pursued, but their realization remains challenging. Here, it is shown that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ≈7 V in ≈100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ≈106 A cm−2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal–insulator–metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm−2 and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip electron sources.&lt;/p&gt;</style></abstract><custom7><style face="normal" font="default" size="100%">000441125200013</style></custom7></record></records></xml>