@article {9312429,
	title = {A Cascade Electron Source Based on Series Horizontal Tunneling Junctions},
	journal = {IEEE Transactions on Electron Devices},
	volume = {68},
	number = {2},
	year = {2021},
	month = {Feb},
	pages = {818-821},
	abstract = {On-chip tunneling electron sources have wide potential applications in miniature vacuum electronic devices, and emission efficiency is one of their performance benchmarks. A cascade electron source (CES) based on series metal{\textendash}insulator{\textendash}metal horizontal tunneling junctions (HTJs) is proposed, where free electrons are additively extracted from each tunneling junction. A CES with $n$ HTJs shows a theoretical emission efficiency of approximately $η ( n )=1-( 1-η _0 )^n$ , with $η _0$ being the efficiency of a single tunneling junction. Experimentally, a CES with three Si{\textendash}SiOx{\textendash}Si tunneling junctions is demonstrated, achieving an emission efficiency of as high as 47.6\%. This work provides a new way of realizing highly efficient on-chip tunneling electron sources.},
	keywords = {cascade, electron emission, electron source, electron sources, horizontal tunneling junction (HTJ), Junctions, Mathematical model, On-chip, Silicon, Substrates, Tunneling},
	issn = {1557-9646},
	doi = {10.1109/TED.2020.3044868},
	author = {Z. Li and X. Wei}
}
