@article {doi:10.1021/acs.nanolett.7b03658,
	title = {Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics},
	journal = {Nano Letters},
	volume = {17},
	number = {12},
	year = {2017},
	note = {PMID: 29189013},
	pages = {7638-7646},
	abstract = {Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been established, while high resolution transmission electron microscopy analysis reveals a high quality monolike crystallinity in the line-shaped engineered SiNW springs. Excitingly, in situ scanning electron microscopy stretching and current{\textendash}voltage characterizations also demonstrate a superelastic and robust electric transport carried by the SiNW springs even under large stretching of more than 200\%. We suggest that this highly reliable line-shape programming approach holds a strong promise to extend the mature c-Si technology into the development of a new generation of high performance biofriendly and stretchable electronics.},
	doi = {10.1021/acs.nanolett.7b03658},
	url = {http://dx.doi.org/10.1021/acs.nanolett.7b03658},
	author = {Xue, Zhaoguo and Mei Sun and Dong, Taige and Tang, Zhiqiang and Zhao, Yaolong and Wang, Junzhuan and Wei, Xianlong and Yu, Linwei and Chen, Qing and Jun Xu and Shi, Yi and Chen, Kunji and Roca i Cabarrocas, Pere}
}
