@article {11487,
	title = {Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors},
	journal = {Applied Physics Letters},
	volume = {106},
	number = {10},
	year = {2015},
	note = {Times Cited: 0 0},
	type = {Journal Article},
	issn = {0003-6951},
	doi = {10.1063/1.4914968},
	url = {<Go to ISI>://WOS:000351397600055},
	author = {Guo, Yao and Wei, Xianlong and Shu, Jiapei and Bo Liu and Yin, Jianbo and Guan, Changrong and Han, Yuxiang and Gao, Song and Chen, Qing}
}
