@article {40689,
	title = {Achieving an ultra-thin GaN channel layerin AlGaN/GaN/AlN high electron mobility transistors},
	journal = {Applied Physics Letters},
	volume = {128},
	year = {2026},
	pages = {163305},
	author = {Junchuan Zhang and Wang, Jiaming* and Xu, Fujun* and Hao Tian and Liu, Wen and Jing Lang and Chengzhi Ji and Wenyu Li and Shicheng Gao and Pengyun Chen and Min Yang and Yang, Xuelin and Tang, Ning and Wang, Xinqiang and Ge, Weikun and Shen, Bo*}
}
