<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Zhenzhu Chen</style></author><author><style face="normal" font="default" size="100%">Haiyan Jiang</style></author><author><style face="normal" font="default" size="100%">Sihong Shao</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A higher-order accurate operator splitting spectral method for the Wigner-Poisson system</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1007/s10825-022-01904-x</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">21</style></volume><pages><style face="normal" font="default" size="100%">756-770</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">An accurate description of 2-D quantum transport in a double-gate metal oxide semiconductor field effect transistor (dgMOSFET) requires a high-resolution solver for a coupled system of the 4-D Wigner equation and 2-D Poisson equation. In this paper, we propose an operator-splitting spectral method to evolve such Wigner–Poisson (WP) system in 4-D phase space with high accuracy. After the operator splitting of the Wigner equation, the resulting two sub-equations can be solved analytically with spectral approximation in phase space. Meanwhile, we adopt a Chebyshev spectral method to solve the Poisson equation. Spectral convergence in phase space and a fourth-order accuracy in time are both numerically verified. Finally, we apply the proposed solver to the simulation of a dgMOSFET, develop the steady states via long-time simulations and obtain numerically converged current–voltage (I–V) curves.</style></abstract><issue><style face="normal" font="default" size="100%">4</style></issue></record></records></xml>