<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Haiyan Jiang</style></author><author><style face="normal" font="default" size="100%">Sihong Shao</style></author><author><style face="normal" font="default" size="100%">Wei Cai</style></author><author><style face="normal" font="default" size="100%">Zhang, Pingwen</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1016/j.jcp.2008.03.018</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">227</style></volume><pages><style face="normal" font="default" size="100%">6553–6573</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">


Non-equilibrium Green’s function (NEGF) is a general method for modeling non-equilibrium quantum transport in open mesoscopic systems with many body scattering effects. In this paper, we present a unified treatment of quantum device boundaries in the framework of NEGF with both finite difference and finite element discretizations. Boundary treat- ments for both types of numerical methods, and the resulting self-energy R for the NEGF formulism, representing the dis- sipative effects of device contacts on the transport, are derived using auxiliary Green’s functions for the exterior of the quantum devices. Numerical results with both discretization schemes for an one-dimensional nano-device and a 29 nm double gated MOSFET are provided to demonstrate the accuracy and flexibility of the proposed boundary treatments. 


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