@article {20060,
	title = {Fabrication of High-Uniformity andHigh-Reliability Si3N4/AlGaN/GaN MIS-HEMTsWith Self-Terminating Dielectric EtchingProcess in a 150-mm Si Foundry},
	journal = {IEEE TRANSACTIONS ON ELECTRON DEVICES},
	volume = {65},
	year = {2018},
	pages = {4814-4819},
	abstract = {A novel early gate dielectric AlGaN/GaNmetal{\textendash}insulator{\textendash}semiconductorhigh-electron-mobilitytransistors (MIS-HEMTs) process is reported. With the highqualitySi3N4 dielectric by low-pressure chemical vapordeposition and damage free, self-terminating passivationlayer etching at the gate area, the MIS-HEMTs on 150-mmSi substrate demonstrate excellent output performanceand good uniformity. The interface trap density betweenthe gate insulator and the barrier layer is as low as2 {\texttimes} 1012 cm-2 {\textperiodcentered} eV-1 extracted by the conductancemethod. The MIS-HEMT fabricated on the wafer delivers anextremely small gate leakage current of 10-9 mA/mm anda high Ion/Ioff ratio of 1011. The subthreshold swing (SS) isaround 80mV/dec, and the saturated output current densityis 750 mA/mm. The dynamic on-resistance increases about42\% at a quiescent drain bias of 600 V. The Vth shift is-0.63 and -0.89 V at a high temperature of 200 {\textdegree}C andnegative gate-bias stress of -25 V, respectively, indicatinga comparable stability with the state-of-the-art MIS-HEMTs.An excellent threshold voltage and SS uniformity (1 -  σ/μ)with the value of 94.5\% and 95.2\% are achieved on the150-mm wafer.},
	url = {https://ieeexplore.ieee.org/document/8472243},
	author = {Hui Sun and Wang, Maojun and Jianguo Chen and Liu, Peng and Kuang, Wenteng and Meihua Liu and Hao, Yilong and Dongmin Chen}
}
