An asymmetric single-nanoslit composed of a conventional nanoslit with a nanogroove next to it in a metallic film is proposed to generate unidirectional surface plasmon polaritons (SPPs) efficiently with back-side illumination. Numerical simulations show that due to the different interference processes of SPPs to opposite directions, efficient unidirectional SPP generation can be achieved. Experimentally, an extinction ratio of about 30:1 for SPPs to opposite directions and a generation efficiency of about 1.8 times that of the symmetrical case are demonstrated at wavelength of 830 nm with the lateral dimension of the asymmetric single-nanoslit of only 370 nm. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3472251]
After the premier commercialization of OLED in 1997, OLED has been considered as the candidate for the next generation of flat panel display. In comparison to liquid crystal display (LCD) and plasma display panel (PDP), OLED exhibits promising merits for display, e. g., flexible, printable, micro-buildable and multiple designable. Although many efforts have been made on electroluminescent (EL) materials and devices, obtaining highly efficient and pure blue light is still a great challenge. In order to improve the emission efficiency and purity of the blue emission, a new bipolar blue light emitter, 2,7-di(2,2': 6', 2 `'-terpyridine)- 2,7-diethynyl-9,9-dioctyl-9H-fluorene (TPEF), was designed and synthesized. A blue OLED was obtained with the configuration of ITO/PEDOT/PVK:CBP:TPEF/LiF/Al. The device exhibits a turn-on voltage of 9 V and a maximum brightness of 12 cd/m(2) at 15 V. The device gives a deep blue emission located at 420 nm with the Commission Internationale de l'Eclairage (CIE) coordinates of (0.17, 0.10). We also use TPEF as electron transporting material in the device of ITO/PPV/TPEF/LiF/Al, the turn-on voltage is 3 V. It is proved the current in the device was enhanced indeed by using the new material.
The energy band of red light-emitting materials is usually very narrow, which easily results in non-radiative recombination of excited states. There also exists concentration q(1)uenching effect due to strong pi-pi interaction. To avoid this, host-guest doping system is mostly used. On the other hand, the ratio of singlet and triplet excited state caused by recombination is 1:3. In comparison with the fluorescence (singlet to singlet), phosphorescence (triplet to singlet, but spin-forbidden) is much weaker, and the quantum yield is much lower. To enhance it and make full use of triplet excited state energy, heavy atom effect is commonly used to induce strong spin-orbital coupling leading to mix of singlet and triplet and release the forbidden triplet energy. Based on this, we fabricated polymer light-emitting diodes adopting polyvinylcarbazole (PVK) as the host and a red fluorescent dye, 2-\2-methyl-6-[2-(2,3,6,7-tetrahydro-1H, 5H-pyrido[3,2,1-ij]quinolin-9-yl)-vinyl]-pyran-4-ylidene\-alononitril e (DCM2), as the dopant, and materials containing heavy-ion, kalium idode (KI) and bromo-carbazole, as energy transfer bridge to obtain complete energy transfer from excited states of both singlet and triplet energy level of PVK to ground state of singlet of DCM2. We found the current density of devices with heavy-ion materials were higher than device without it, and the weak blue emission from PVK host, existing in device of PVK:DCM2 device, can not be observed in electroluminescence spectra of device with heavy-ion materials, which indicates a complete energy transfer from both triplet and singlet energy levels.
