Wan L, Deng M, Fu WJ, Qian M. A method to correct systematic bias in Affymetrix SNP arrays. BioMedical Engineering and Informatics: New Development and the Future - Proceedings of the 1st International Conference on BioMedical Engineering and Informatics, BMEI 2008. 2008:442-446.
This article presents the application of an integrated method that estimates the dispersion of polycyclic aromatic hydrocarbons (PAHs) in air, and assesses the human health risk associated with PAHs inhalation. An uncertainty analysis method consisting of three components were applied in this study, where the three components include a bootstrapping method for analyzing the whole process associated uncertainty, an inhalation rate (IR) representation for evaluating the total PAH inhalation risk for human health, and a normally distributed absorption fraction (AF) ranging from 0% to 100% to represent the absorption capability of PAHs in human body. Using this method, an integrated process was employed to assess the health risk of the residents in Beijing, China, from inhaling PAHs in the air. The results indicate that the ambient air PAHs in Beijing is an important contributor to human health impairment, although over 68% of residents seem to be safe from daily PAH carcinogenic inhalation. In general, the accumulated daily inhalation amount is relatively higher for male and children at 10 years old of age than for female and children at 6 years old. In 1997, about 1.73% cancer sufferers in Beijing were more or less related to ambient air PAHs inhalation. At 95% confidence interval, approximately 272-309 individual cancer incidences can be attributed to PAHs pollution in the air. The probability of greater than 500 cancer occurrence is 15.3%. While the inhalation of ambient air PAHs was shown to be an important factor responsible for higher cancer occurrence in Beijing, while the contribution might not be the most significant one.
Yuan L, Wang M, Chen KJ. Molecular Dynamics Simulation Study on Fluorine Plasma Ion Implantation in AlGaN/GaN Heterostructures, in 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4. IEEE Beijing Sect; Chinese Inst Elect; IEEE Electron Devices Soc; IEEE EDS Beijing Chapter; IEEE Solid State Circuits Soc; IEEE Circuits & Syst Soc; IEEE Hong Kong EDS, SSCS Chapter; IEEE SSCS Beijing Chapter; Japan Soc Appl Phys; Elect Div IEEE; URSI Com; 2008:1090-1093.Abstract
Fluorine plasma ion implantation is a robust technique that enables shallow implantation of fluorine ions into group III-nitride epitaxial structures. This technique has been used to achieve robust threshold control of the AlGaN/GaN high electron mobility transistors (HEMTs) and. led to the realization of self-aligned enhancement-mode devices. To reveal the atomic scale interactions and provide a modeling tool for process design and optimization, a molecular dynamics (MD) simulation is conducted for carbon tetrafluoride (CF(4)) plasma implantation. Specific potential functions are applied to calculate the interactions among atoms and simulate the dynamics process of fluorine ions' penetration and stopping in III-nitride materials. The MD simulation provides accurate information on dopant profiles that are verified by secondary ion mass spectrum (SIMS) measurements. Defect formation and distributions, that are critical in process development, are also investigated. The MD simulation tool is capable of providing 2-dimensional fluorine dopant profiles.