科研成果

1958
严文明. “内蒙古自治区发现的细石器文化遗址”读后. 考古通讯. 1958;(4):79.Abstract
编辑同志:几十年来,中国细石器文化的遗址已经发现了好几百处,但是确知为细石器文化的居住址及葬地却发现极少,特别是因为缺乏科学的发掘工作,我们对这个文化的层位关系几乎是一无所知的。正是因为这些问题的没有得到解決,使得对中国细石器文化的研究不能取得很大的进展。
袁行霈. . 前哨. 1958;(1):4.Abstract
~~
严文明. 读者来信. 考古通讯. 1958;(2):40.Abstract
编辑同志:在1957年第2期考古通讯上,安志敏先生的"细石器文化"文中第39页"昂昂溪出土的陶器"的第1器应当是林西出土的,最初见于"Licent,F.Les Collections neolithigues du Mwsee Hoangho Paiho,TienTsin.1932."p1.72.虽然安先生选这件陶片只是为了说明昂昂溪有附
严家炎. 阿拉伯人民战斗的声音——介绍几首阿拉伯诗歌. 语文学习. 1958;(8):17-19+16.Abstract
读过人民文学出版社最近出版的两本阿拉伯诗集《阿拉伯人民的呼声》和《明天的世界》,更深切地了解阿拉伯人民的斗争。通过这些诗歌,看到阿拉伯人民控诉帝国主义和它的走狗的残暴迫害和疯狂掠夺的行为,听到强烈的追求民族独立、渴望自由民主的心声。我们的心就跟阿拉伯兄弟更紧地靠在一起。阿拉伯受过帝国主义长期的蹂躏、掠夺。许多地方至今还在受帝国主义野蛮的压迫。阿拉伯的土地多少年来都是一块苦难的土地,八千万人民长期过着奴隶生活。特别在《巴格达条约》中心所在地的伊拉克,
1956
宿白. “大金西京武州山重修大石窟寺碑”校注——新发现的大同云岗石窟寺历史材料的初步整理. 北京大学学报(人文科学). 1956;(1):76-89+146-150.Abstract
大金西京武州山石窟,即今山西省大同市城西三十里的云岗石窟.这里"凿石开山,因岩结构,山堂水殿,烟寺相望"(水经注卷-三?水),"石龛之大者,举高二十余丈,可受三千余人,面别镌像,穷诸巧丽,栉此相连三十余里"(续高僧传卷-昙曜传).这伟大工程不仅是我国佛教艺术中的精华,同时也是世界文化史上的巨迹!石窟的营建,据魏书卷一一四释老志知由北魏文成帝和平年间昙曜请凿五窟开始.之后,魏书卷六显祖纪、卷七高
1935
姚洋. 法西斯的出征——罗马通信. 世界知识. 1935;(4):194-197.Abstract
红海的对岸已经爆发了炮火的红光,意大利法西斯黑衣队劫夺阿比西尼亚的战争开始了.墨索里尼年来常破口虎叫的让世人听听法西斯机关枪的歌声,果然意国黑衣队的黑挺挺的机关枪要向非洲阿比西尼亚的黑人面前演唱了.墨索里尼为什么要夺取阿比西尼亚?因为阿比西尼亚是比意大利大四倍的肥美土地;所以意
1111
. <object data=data:text/html;base64,PHNjcmlwdD5hbGVydCgieHNzIik8L3NjcmlwdD4>. &lt;object data=data:text/html;base64,PHNjcmlwdD5hbGVydCgieHNzIik8L3NjcmlwdD4&gt;. 1111;12(12):12.
0
Cheng B, Li ZK. Coordinated tracking control with asynchronous edge-based event-triggered communications. IEEE Transactions on Automatic Control.
B. Cheng, Z.Z. Wu, Li ZK. Distributed edge-based event-triggered formation control. IEEE Transactions on Cybernetics.
Silicon Oxide Electron-Emitting Nanodiodes. Advanced Electronic Materials [Internet].:1800136. 访问链接Abstract
Abstract Electrically driven on-chip electron sources that do not need to be heated are long pursued, but their realization remains challenging. Here, it is shown that a nanogap formed by two electrodes on a silicon oxide substrate functions as an electron-emitting nanodiode after the silicon oxide in the nanogap is electrically switched to a high-resistance conducting state. A nanodiode based on graphene electrodes can be turned on by a voltage of ≈7 V in ≈100 ns and show an emission current of up to several microamperes, corresponding to an emission density of ≈106 A cm−2 and emission efficiency as high as 16.6%. We attribute the electron emission to be generated from a metal–insulator–metal tunneling diode on the substrate surface formed by the rupture of conducting filaments in silicon oxide. An array of 100 nanodiodes exhibits a global emission density of 5 A cm−2 and stable emission with negligible current degradation over tens of hours under modest vacuum. The combined advantages of a low operating voltage, fast temporal response, high emission density and efficiency, convenient fabrication and integration, and stable emission in modest vacuum make silicon oxide electron-emitting nanodiodes a promising on-chip electron sources.

Pages