Citation:Fu X, Jacopin G, Shahmohammadi M, Liu R, Benameur M, Ganière J-D, Feng J, Guo W, Liao Z-M, Deveaud B, et al. Exciton drift in semiconductors under uniform strain gradients: Application to bent ZnO microwires. ACS Nano. 2014;(4):3412-3420.ExportDOI BibTex EndNote Tagged EndNote XML DOI