<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Jinbing</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wang, Pengfei</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Pei, Xinyi</style></author><author><style face="normal" font="default" size="100%">Sun, Na</style></author><author><style face="normal" font="default" size="100%">Ye, Jiandong</style></author><author><style face="normal" font="default" size="100%">Zhang, Xun</style></author><author><style face="normal" font="default" size="100%">Feng, Yuxia</style></author><author><style face="normal" font="default" size="100%">Yang, Han</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced Gate Reliability and High Threshold Voltage p-GaN HEMT With p-NiO/p-GaN Heterojunction</style></title><secondary-title><style face="normal" font="default" size="100%">2026 IEEE 38th International Symposium on Power Semiconductor Devices and ICs (ISPSD)</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">10-year lifetime</style></keyword><keyword><style  face="normal" font="default" size="100%">Aluminum</style></keyword><keyword><style  face="normal" font="default" size="100%">Displays</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrons</style></keyword><keyword><style  face="normal" font="default" size="100%">Gate leakage</style></keyword><keyword><style  face="normal" font="default" size="100%">gate reliability</style></keyword><keyword><style  face="normal" font="default" size="100%">Generative adversarial networks</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">Indexes</style></keyword><keyword><style  face="normal" font="default" size="100%">Leakage currents</style></keyword><keyword><style  face="normal" font="default" size="100%">Mercury (metals)</style></keyword><keyword><style  face="normal" font="default" size="100%">p-GaN high-electron-mobility transistor (HEMT)</style></keyword><keyword><style  face="normal" font="default" size="100%">p-NiO/p-GaN heterojunction</style></keyword><keyword><style  face="normal" font="default" size="100%">Printing</style></keyword><keyword><style  face="normal" font="default" size="100%">threshold voltage (Vth)</style></keyword><keyword><style  face="normal" font="default" size="100%">time-dependent gate breakdown (TDGB)</style></keyword><keyword><style  face="normal" font="default" size="100%">Voltage</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2026</style></year></dates><pages><style face="normal" font="default" size="100%">625-628</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>