<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Song, Jiaojiao</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Fan, Zetao</style></author><author><style face="normal" font="default" size="100%">Zhang, Jiaxin</style></author><author><style face="normal" font="default" size="100%">Yang, Han</style></author><author><style face="normal" font="default" size="100%">Wang, Pengfei</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Cheng Li</style></author><author><style face="normal" font="default" size="100%">Li Yuan</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of Source Electrostatic Interaction on the Off-State Leakage Current of p-GaN Gate HEMTs</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Current measurement</style></keyword><keyword><style  face="normal" font="default" size="100%">Electrostatics</style></keyword><keyword><style  face="normal" font="default" size="100%">field plate</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">Leakage currents</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">MODFETs</style></keyword><keyword><style  face="normal" font="default" size="100%">off-state leakage</style></keyword><keyword><style  face="normal" font="default" size="100%">p-GaN HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">source electrostatic interaction</style></keyword><keyword><style  face="normal" font="default" size="100%">Wide band gap semiconductors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2024</style></year></dates><number><style face="normal" font="default" size="100%">10</style></number><volume><style face="normal" font="default" size="100%">45</style></volume><pages><style face="normal" font="default" size="100%">1728-1731</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>