<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wu, Yanlin</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Nuo, Muqin</style></author><author><style face="normal" font="default" size="100%">Yang, Junjie</style></author><author><style face="normal" font="default" size="100%">Wei Lin</style></author><author><style face="normal" font="default" size="100%">Zheng, Zheyang</style></author><author><style face="normal" font="default" size="100%">Li Zhang</style></author><author><style face="normal" font="default" size="100%">Hua, Mengyuan</style></author><author><style face="normal" font="default" size="100%">Yang, Xuelin</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Electron Device Letters</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Active-passivation p-GaN gate HEMT (AP-HEMT)</style></keyword><keyword><style  face="normal" font="default" size="100%">dynamic Rₒₙ</style></keyword><keyword><style  face="normal" font="default" size="100%">e-mode</style></keyword><keyword><style  face="normal" font="default" size="100%">Electron traps</style></keyword><keyword><style  face="normal" font="default" size="100%">HEMTs</style></keyword><keyword><style  face="normal" font="default" size="100%">Logic gates</style></keyword><keyword><style  face="normal" font="default" size="100%">mobile holes</style></keyword><keyword><style  face="normal" font="default" size="100%">MODFETs</style></keyword><keyword><style  face="normal" font="default" size="100%">passivation</style></keyword><keyword><style  face="normal" font="default" size="100%">surface screening</style></keyword><keyword><style  face="normal" font="default" size="100%">Testing</style></keyword><keyword><style  face="normal" font="default" size="100%">Wide band gap semiconductors</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2023</style></year></dates><number><style face="normal" font="default" size="100%">1</style></number><volume><style face="normal" font="default" size="100%">44</style></volume><pages><style face="normal" font="default" size="100%">25-28</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>