<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xu, Jiayue</style></author><author><style face="normal" font="default" size="100%">Liu, Xuan</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng P.</style></author><author><style face="normal" font="default" size="100%">Wei, Jin</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Correlation Between Reverse Leakage Current and Electric Field Spreading in GaN Vertical SBD With High-Energy Ion Implanted Guard Rings</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE Transactions on Electron Devices</style></secondary-title></titles><keywords><keyword><style  face="normal" font="default" size="100%">Anodes</style></keyword><keyword><style  face="normal" font="default" size="100%">Edge termination (ET)</style></keyword><keyword><style  face="normal" font="default" size="100%">Electric fields</style></keyword><keyword><style  face="normal" font="default" size="100%">Fluorine</style></keyword><keyword><style  face="normal" font="default" size="100%">Gallium nitride</style></keyword><keyword><style  face="normal" font="default" size="100%">gallium nitride (GaN)</style></keyword><keyword><style  face="normal" font="default" size="100%">guard ring (GR)</style></keyword><keyword><style  face="normal" font="default" size="100%">Ion implantation</style></keyword><keyword><style  face="normal" font="default" size="100%">ions</style></keyword><keyword><style  face="normal" font="default" size="100%">Leakage currents</style></keyword><keyword><style  face="normal" font="default" size="100%">Vertical Schottky barrier diodes (SBDs)</style></keyword></keywords><dates><year><style  face="normal" font="default" size="100%">2023</style></year></dates><number><style face="normal" font="default" size="100%">4</style></number><volume><style face="normal" font="default" size="100%">70</style></volume><pages><style face="normal" font="default" size="100%">1745-1750</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>