<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Sun, Haozhe</style></author><author><style face="normal" font="default" size="100%">Wei Lin</style></author><author><style face="normal" font="default" size="100%">Yin, Ruiyuan</style></author><author><style face="normal" font="default" size="100%">Jianguo Chen</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Jin, Yufeng</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Evaluation of the border traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method</style></title><secondary-title><style face="normal" font="default" size="100%">Japanese Journal of Applied Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2022</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://iopscience.iop.org/article/10.35848/1347-4065/ac711d/meta</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">IOP Publishing</style></publisher><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>