<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Yin, Ruiyuan</style></author><author><style face="normal" font="default" size="100%">Li,Yue</style></author><author><style face="normal" font="default" size="100%">Yu Sun</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng P.</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET</style></title><secondary-title><style face="normal" font="default" size="100%">Applied Physics Letters</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1063/1.5037646</style></url></web-urls></urls><number><style face="normal" font="default" size="100%">23</style></number><volume><style face="normal" font="default" size="100%">112</style></volume><pages><style face="normal" font="default" size="100%">233505</style></pages><language><style face="normal" font="default" size="100%">eng</style></language></record></records></xml>