<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ming Tao</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wen, C.P.</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Cheng, Kai</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit</style></title><secondary-title><style face="normal" font="default" size="100%">2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year><pub-dates><date><style  face="normal" font="default" size="100%">2017</style></date></pub-dates></dates><pages><style face="normal" font="default" size="100%">93-6</style></pages><isbn><style face="normal" font="default" size="100%">978-4-88686-094-1</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This work reports a kilovolt and low current collapse normally-off GaN MOSHEMT on silicon substrate. The device with a drift length of 3 mum features a threshold voltage of 1.7 V and an output current of 430 mA/mm at 8 V gate bias. The off-state breakdown voltage (BV) is as high as 1021 V (800 V) defined at a drain leakage criterion of 10 muA/mm with floating (grounded) substrate. The corresponding breakdown electric field is 3.4 MV/cm and the Baliga's figure-of-merit (BFOM) is 1.6 GW/cm2. A small degradation of the dynamic on-resistance (Ron, d) about 30% is observed with a short pulse width of 500 ns and a quiescent drain bias of 60 V. The record value is supposed to benefit from the intrinsic step-graded field plate, high quality LPCVD Si3N4 passivation and material optimization of 4.5 mum thick epitaxial layer.</style></abstract><work-type><style face="normal" font="default" size="100%">Conference Paper</style></work-type><notes><style face="normal" font="default" size="100%">2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 28 May-1 June 2017, Sapporo, Japan</style></notes></record></records></xml>