<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Li Yuan</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Atomistic Modeling of Fluorine Implantation and Diffusion in III-Nitride Semiconductors</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">International Electron Devices Meeting</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2008</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE Electron Devices Soc</style></publisher><pages><style face="normal" font="default" size="100%">543-546</style></pages><isbn><style face="normal" font="default" size="100%">978-1-4244-2377-4</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A hybrid molecular dynamics (MD)/kinetic Monte Carlo (KMC) model is developed for atomistic modeling of fluorine ion implantation and diffusion in AlGaN/GaN heterostructures. The MD simulation reveals the F distribution profiles and the corresponding defect profiles, and most importantly, the potential energies of fluorine ions in the III-nitride material system. Using the results from the MD simulation, the diffusion process is simulated with KMC method, and the modeling results are validated by the secondary-ion-mass-spectrum (SIMS) measurement. The surface effect on the fluorine's stability and its improvement by passivation are also successfully modeled.</style></abstract><notes><style face="normal" font="default" size="100%">IEEE International Electron Devices Meeting, San Francisco, CA, DEC 15-17, 2008</style></notes><custom7><style face="normal" font="default" size="100%">000265829300127</style></custom7></record></records></xml>