<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Off-State Breakdown Characterization in AlGaN/GaN HEMT Using Drain Injection Technique</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE TRANSACTIONS ON ELECTRON DEVICES</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2010</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">7</style></number><volume><style face="normal" font="default" size="100%">57</style></volume><pages><style face="normal" font="default" size="100%">1492-1496</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using drain-current injection techniques with different injection current levels. Competitions between the source leakage and gate leakage, pure leakage and impact ionization, and source-and gate-injection-induced impact ionization during the drain-injection measurement are discussed in detail. It was found that the breakdown originates from the source/gate leakage at low drain injection levels but is dominated by source/gate-induced impact ionization process at high drain injection currents. The source-induced impact ionization usually precedes the gate-induced impact ionization in low-gate leakage devices, resulting in a premature three-terminal off-state breakdown. We also found that the gate-bias value affects the breakdown voltage in the conventional three-terminal off-state breakdown I-V measurement and should be carefully considered.</style></abstract><custom7><style face="normal" font="default" size="100%">000278995900002</style></custom7></record></records></xml>