<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE TRANSACTIONS ON ELECTRON DEVICES</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2011</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">2</style></number><volume><style face="normal" font="default" size="100%">58</style></volume><pages><style face="normal" font="default" size="100%">460-465</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Improvement of the AlGaN/GaN high-electron mobility transistor's (HEMT's) OFF-state breakdown voltage is achieved by implanting (19)F(+) ions at an energy of 50 keV and dose of 1 x 10(12) cm(-2) under the gate region using BF(3) as the source. The charge state of the implanted fluorine ions changes from positive to negative in the AlGaN/GaN structure because of fluorine's strong electronegativity. The negative-charged fluorine ions at the back side of the two-dimensional electron gas can raise the energy barrier of the GaN buffer layer under the channel, effectively blocking the current injected from the source to the high-field region of the GaN channel when the HEMT is biased at OFF-state. The source-injected electrons, if not blocked, could flow to the high-field region and initiate a premature three-terminal OFF-state breakdown in a conventional AlGaN/GaN HEMT. A 38% improvement of the three-terminal OFF-state breakdown voltage and 40% improvement of the power figure-of-merit V(BD-off)(2)/R(on) are achieved in the enhanced back barrier HEMT.</style></abstract><custom7><style face="normal" font="default" size="100%">000286515400024</style></custom7></record></records></xml>