<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Meng Di</style></author><author><style face="normal" font="default" size="100%">Lin Shuxun</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng P.</style></author><author><style face="normal" font="default" size="100%">Wang Maojun</style></author><author><style face="normal" font="default" size="100%">Wang Jinyan</style></author><author><style face="normal" font="default" size="100%">Hao Yilong</style></author><author><style face="normal" font="default" size="100%">Zhang Yaohui</style></author><author><style face="normal" font="default" size="100%">Lau, Kei May</style></author><author><style face="normal" font="default" size="100%">Wu Wengang</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Characteristics of Submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC Substrate</style></title><secondary-title><style face="normal" font="default" size="100%">2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">IEEE Conference on Electron Devices and Solid-State Circuits</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year></dates><isbn><style face="normal" font="default" size="100%">978-1-4673-2523-3</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with thick (&gt;30 nm), high-kappa (TiO2/NiO), submicron-footprint (0.4 mu m) gate dielectric on SiC substrate are demonstrated, which are found to exhibit low gate leakage current (similar to 1 nA/mm of gate periphery), high I-MAX (1 A/mm), and high drain breakdown voltage (188 V). The derived current gain cutoff frequency is 30 GHz (from S-parameter measurements). The output power density is 6.6 W/mm, and the associated power-add ed-efficiency is 46% at 2.5 GHz frequency and 50 V drain bias. This high performance submicron-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems.</style></abstract><notes><style face="normal" font="default" size="100%">IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, PEOPLES R CHINA, JUN 03-05, 2013</style></notes><custom7><style face="normal" font="default" size="100%">000380585600108</style></custom7></record></records></xml>