<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xu, Zhe</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Yang Liu</style></author><author><style face="normal" font="default" size="100%">Cai, Jinbao</style></author><author><style face="normal" font="default" size="100%">Liu, Jingqian</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Min Yu</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Ma, Xiaohua</style></author><author><style face="normal" font="default" size="100%">Zhang, Jincheng</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE ELECTRON DEVICE LETTERS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2013</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUL</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">7</style></number><volume><style face="normal" font="default" size="100%">34</style></volume><pages><style face="normal" font="default" size="100%">855-857</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A self-terminating gate recess etching technique is first proposed to fabricate normally off AlGaN/GaN MOSFET. The gate recess process includes a thermal oxidation of the AlGaN barrier layer for 40 min at 615 degrees C followed by 45-min etching in potassium hydroxide solution at 70 degrees C, which is found to be self-terminated at the AlGaN/GaN interface with negligible effect on the underlying GaN layer, manifesting itself easy to control, highly repeatable, and promising for industrialization. The fabricated device based on this technique with atomic layer deposition Al2O3 as gate insulator exhibits a threshold voltage as high as 3.2 V with a maximum drain current over 200 mA/mm and a 60% increased breakdown voltage than that of the conventional high electron mobility transistors.</style></abstract><custom7><style face="normal" font="default" size="100%">000323685700011</style></custom7></record></records></xml>