<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wang, Ye</style></author><author><style face="normal" font="default" size="100%">Zhang, Chuan</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng P.</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Normally-Off Hybrid Al2O3/GaN MOSFET on Silicon Substrate Based on Wet-Etching</style></title><secondary-title><style face="normal" font="default" size="100%">2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES &amp; IC'S (ISPSD)</style></secondary-title><tertiary-title><style face="normal" font="default" size="100%">Proceedings of the International Symposium on Power Semiconductor Devices &amp; ICs</style></tertiary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year></dates><publisher><style face="normal" font="default" size="100%">IEEE</style></publisher><pages><style face="normal" font="default" size="100%">253-256</style></pages><isbn><style face="normal" font="default" size="100%">978-1-4799-2918-4</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper reports a normally-off high voltage hybrid Al203/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al203/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer curve. The three terminal off-state breakdown voltage is 1650 V for the device with 30 gm gate-drain distance with floating Si substrate. The breakdown voltage is limited to 1000 V when the Si substrate is grounded. The on-resistance is 7.0 m Omega cm(2) for the device with 30 gm gate-drain distance and the power figure of merit is 388 MW/cm2. The small signal RF performance of the normally-off GaN MOSFET is also evaluated.</style></abstract><notes><style face="normal" font="default" size="100%">IEEE 26th International Symposium on Power Semiconductor Devices &amp; IC's (ISPSD), Waikoloa, HI, JUN 15-19, 2014</style></notes><custom7><style face="normal" font="default" size="100%">000346735500062</style></custom7></record></records></xml>