<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Wang, Ye</style></author><author><style face="normal" font="default" size="100%">Zhang, Chuan</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Wen, Cheng P.</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Hao, Yilong</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">900 V/1.6 m Omega . cm(2) Normally Off Al2O3/GaN MOSFET on Silicon Substrate</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE TRANSACTIONS ON ELECTRON DEVICES</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">JUN</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">6, SI</style></number><volume><style face="normal" font="default" size="100%">61</style></volume><pages><style face="normal" font="default" size="100%">2035-2040</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, we report the device performance of a high-voltage normally off Al2O3/GaN MOSFET on the Si substrate. Normally off operation is obtained by multiple cycles of O-2 plasma oxidation and wet oxide-removal gate recess process. The recessed normally off GaN MOSFET with 3 mu m gate-drain distance exhibits a maximum drain current of 585 mA/mm at 9 V gate bias. The threshold voltage of the MOSFET is 2.8 V with a standard derivation of 0.2 V on the sample with an area of 2 x 2 cm(2). The gate leakage current is below 10(-6) mA/mm during the whole gate swing up to 9 V and the I-ON/I-OFF ratio is larger than 10(9), indicating the good quality of Al2O3 gate insulator. The MOSFET with 10 mu m gate-drain distance shows a three terminal OFF-state breakdown voltage (BV) of 967 V at zero gate-source bias with a drain leakage current criterion of 1 mu A/mm. The specific ON-resistance (R-ON,R- SP) of the device is 1.6 m Omega . cm(2) and the power figure of merit (BV2/R-ON,R- SP) is 584 MW/cm(2).</style></abstract><custom7><style face="normal" font="default" size="100%">000338026200063</style></custom7></record></records></xml>