<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Xu, Zhe</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Yong Cai</style></author><author><style face="normal" font="default" size="100%">Liu, Jingqian</style></author><author><style face="normal" font="default" size="100%">Jin, Chunyan</style></author><author><style face="normal" font="default" size="100%">Yang, Zhenchuan</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Min Yu</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Ma, Xiaohua</style></author><author><style face="normal" font="default" size="100%">Zhang, Jincheng</style></author><author><style face="normal" font="default" size="100%">Hao, Yue</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio</style></title><secondary-title><style face="normal" font="default" size="100%">IEEE ELECTRON DEVICE LETTERS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">12</style></number><volume><style face="normal" font="default" size="100%">35</style></volume><pages><style face="normal" font="default" size="100%">1200-1202</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Postgate annealing (PGA) in N-2/O-2 atmosphere at 300 degrees C for various annealing time is performed on enhancement mode AlGaN/GaN MOSFET fabricated using a self-terminating gate recess etching technique. After 45-min annealing, the device OFF-state leakage current decreases by more than two orders of magnitude and thus a low OFF-state leakage current of similar to 10(-13) A/mm is obtained at room temperature, resulting in an excellent ON/OFF current ratio of similar to 10(12). At 250 degrees C, the device still exhibits a low OFF-state leakage current of similar to 10(-9) A/mm and high ON/OFF current ratio of similar to 10(8). Meanwhile, a strong correlation between the OFF-state leakage current and mesa isolation current is observed as we change the annealing time: 1) the lower the mesa isolation current and 2) the lower the OFF-state leakage current and thus the higher the ON/OFF current ratio. It is the suppression of the mesa isolation current owing to the passivation of atomic layer deposition Al2O3 that leads to the improvement of the OFF-state leakage current and ON/OFF current ratio after PGA. Besides, the device shows no obvious change in terms of its threshold voltage and maximum drain current after PGA.</style></abstract><custom7><style face="normal" font="default" size="100%">000345575400013</style></custom7></record></records></xml>