<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, Jingqian</style></author><author><style face="normal" font="default" size="100%">Wang, Jinyan</style></author><author><style face="normal" font="default" size="100%">Xu, Zhe</style></author><author><style face="normal" font="default" size="100%">Jiang, Haisang</style></author><author><style face="normal" font="default" size="100%">Yang, Zhenchuan</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Min Yu</style></author><author><style face="normal" font="default" size="100%">Xie, Bing</style></author><author><style face="normal" font="default" size="100%">Wu, Wengang</style></author><author><style face="normal" font="default" size="100%">Ma, Xiaohua</style></author><author><style face="normal" font="default" size="100%">Zhang, Jincheng</style></author><author><style face="normal" font="default" size="100%">Hao, Yue</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs</style></title><secondary-title><style face="normal" font="default" size="100%">ELECTRONICS LETTERS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year><pub-dates><date><style  face="normal" font="default" size="100%">DEC 4</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">25</style></number><volume><style face="normal" font="default" size="100%">50</style></volume><pages><style face="normal" font="default" size="100%">1980-1981</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650 degrees C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70 degrees C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved.</style></abstract><custom7><style face="normal" font="default" size="100%">000345994700050</style></custom7></record></records></xml>