<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Liu, Shenghou</style></author><author><style face="normal" font="default" size="100%">Yang, Shu</style></author><author><style face="normal" font="default" size="100%">Tang, Zhikai</style></author><author><style face="normal" font="default" size="100%">Jiang, Qimeng</style></author><author><style face="normal" font="default" size="100%">Liu, Cheng</style></author><author><style face="normal" font="default" size="100%">Wang, Maojun</style></author><author><style face="normal" font="default" size="100%">Shen, Bo</style></author><author><style face="normal" font="default" size="100%">Chen, Kevin J.</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Interface/border trap characterization of Al2O3/AlN/GaN metal-oxide-semiconductor structures with an AlN interfacial layer</style></title><secondary-title><style face="normal" font="default" size="100%">APPLIED PHYSICS LETTERS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2015</style></year><pub-dates><date><style  face="normal" font="default" size="100%">FEB 2</style></date></pub-dates></dates><number><style face="normal" font="default" size="100%">5</style></number><volume><style face="normal" font="default" size="100%">106</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al2O3/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density D-it in MOS structures, Dit in the device with AlN was determined to be in the range of 10(11)-10(12) eV(-1) cm(-2), showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well. (C) 2015 AIP Publishing LLC.</style></abstract><custom7><style face="normal" font="default" size="100%">000349611800018</style></custom7></record></records></xml>